Fermi Level Pinning Induced by Doping in Air Stable n-Type Organic Semiconductor

Quantum point contact due to Fermi-level pinning and doping profiles in semiconductor nanocolumns

We show that nanoscale doping profiles inside a nanocolumn in combination with Fermi-level pinning at the surface give rise to the formation of a saddlepoint in the potential profile. Consequently, the lateral confinement inside the channel varies along the transport direction, yielding an embedded quantum point contact. An analytical estimation of the quantization energies will be given.

Fermi-level pinning can determine polarity in semiconductor nanorods

First-principles calculations of polar semiconductor nanorods reveal that their dipole moments are strongly influenced by Fermi-level pinning. The Fermi level for an isolated nanorod is found to coincide with a significant density of electronic surface states at the end surfaces, which are either mid-gap states or band-edge states. These states pin the Fermi level, and therefore fix the potenti...

An air-stable low-bandgap n-type organic polymer semiconductor exhibiting selective solubility in perfluorinated solvents.

A thin-film transistor: An n-type polymer semiconductor, poly(2,3-bis(perfluorohexyl)thieno[3,4-b]pyrazine), was synthesized through a Pd-catalyzed polycondensation employing a perfluorinated multiphase solvent system. This is the first example of an n-type polymer semiconductor with exclusive solubility in fluorinated solvents. The fabrication of organic field effect transistors containing thi...

Fermi-Level Pinning by Misfit Dislocations at GaAs Interfaces

Fermi-level pinning by misfit dislocations at GaAs interfaces has been investigated. n -GaInAs was used to control the misfit dislocation density by varying of composition and epilayer thickness. interfaces with zero or low dislocation densities are Ohmic to current flow, and become rectifying with increasing dislocation density. The "Schottky barrier height" increases with dislocation density ...

All Epitaxial Mode and Current Confined Semiconductor Laser Using Selective Fermi Level Pinning